AON7410 30v n-channel mosfet features v ds (v) = 30v i d = 24a (v gs = 10v) r ds(on) < 20m w (v gs = 10v) r ds(on) < 26m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the AON7410 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in dc - dc converters and load switch applications. g d s dfn 3x3 ep top view bottom view pin 1 top view 12 3 4 87 6 5 symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol typ max 30 40 60 75 r q jc 5 6 power dissipation b w p d c 20 8.3 -55 to 150 t c =100c t a =70c continuous drain current b maximum units parameter t c =25c t c =100c 30 absolute maximum ratings t a =25c unless otherwise noted v 9.5 a i d pulsed drain current c 7.7 24 15 50 t a =70c v 20 gate-source voltage drain-source voltage steady-state continuous drain current a t a =25c i dsm t a =25c t c =25c c/w thermal characteristics parameter units maximum junction-to-ambient a 3.1 t 10s r q ja c/w c/w maximum junction-to-case b p dsm 2 junction and storage temperature range maximum junction-to-ambient a steady-state power dissipation a avalanche current c repetitive avalanche energy l=0.1mh c 17 a 14 mj s pin 1 alpha & omega semiconductor, ltd. www.aosmd.com
AON7410 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1.4 1.8 2.5 v i d(on) 50 a 16 20 t j =125c 24 29 21 26 g fs 30 s v sd 0.75 1 v i s 20 a c iss 440 550 660 pf c oss 77 110 143 pf c rss 33 55 77 pf r g 3 4 4.9 w q g (10v) 7.8 9.8 12 nc q g (4.5v) 3.6 4.6 5.5 nc q gs 1.4 1.8 2.2 nc q gd 1.3 2.2 3 nc t d(on) 5 ns gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =8a m w v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge turn-on delaytime gate drain charge maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage v gs =10v, i d =8a reverse transfer capacitance diode forward voltage v gs =4.5v, i d =7a i s =1a,v gs =0v v ds =5v, i d =8a on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v ds =30v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current gate threshold voltage v ds =v gs i d =250 m a alpha & omega semiconductor, ltd. www.aosmd.com t d(on) 5 ns t r 3.2 ns t d(off) 24 ns t f 6 ns t rr 7 9 11 ns q rr 12 15 18 nc 150 components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =2 w , r gen =3 w turn-off fall time turn-on delaytime body diode reverse recovery charge i f =8a, di/dt=500a/ m s body diode reverse recovery time i f =8a, di/dt=500a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperat ure of 150 c. the value in any given application depends on the user's specific board de sign, and the maximum temperature of 150 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. g. the maximum current rating is limited by bond-wi res. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev11: jul-2011 alpha & omega semiconductor, ltd. www.aosmd.com
AON7410 typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s 0 10 20 30 40 50 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics 4v 4.5v 10v 3.5v 0 10 20 30 40 50 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds = 5v 14 16 18 20 22 24 26 0 5 10 15 20 25 30 r ds(on) (m w ww w ) v gs = 10v v gs = 4.5v 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance v gs = 3v v gs = 10v i d = 8a v gs = 4.5v i d = 7a alpha & omega semiconductor, ltd. www.aosmd.com i f =-6.5a, di/dt=100a/ m s 14 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 10 15 20 25 30 35 40 45 50 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d = 8a 25 c 125 c alpha & omega semiconductor, ltd. www.aosmd.com
AON7410 typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0 100 200 300 0.00001 0.0001 0.001 0.01 0.1 1 10 power (w) 0.01 0.1 1 10 100 0.1 1 10 100 i d (amps) r ds(on) limited t j(max) =150 c t a =25 c 100 m s 1ms 10 m s dc v ds = 15v i d = 8a t j(max) =150 c t c =25 c alpha & omega semiconductor, ltd. www.aosmd.com 0 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction- to-case (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance(note f) 0.01 0.1 1 10 100 v ds (volts) figure 9: maximum forward biased safe operating area (note h) t a =25 c single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =6 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse alpha & omega semiconductor, ltd. www.aosmd.com
AON7410 typical electrical and thermal characteristics 0 5 10 15 20 25 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to- ambient (note h) t a =25 c 40 single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75 c/w 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance(note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse ambient (note h) alpha & omega semiconductor, ltd. www.aosmd.com
AON7410 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr alpha & omega semiconductor, ltd. www.aosmd.com
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